Effect of parasitic elements on UTBB FD SOI MOSFETs RF figures of merit-Reference-Cited by-同舟云学术

Effect of parasitic elements on UTBB FD SOI MOSFETs RF figures of merit

Published:2014-07 Issue: Volume:97 Page:38-44
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Md Arshad M.K.,Kilchytska V.,Emam M.,Andrieu F.,Flandre D.,Raskin J.-P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference62 articles.

1. International Technology Roadmap for Semiconductor (ITRS), 2011 Edition. .

2. Innovative materials, devices, and CMOS technologies for low-power mobile multimedia;Skotnicki;IEEE Trans Electron Devices,2008

3. Extremely scaled silicon nano-CMOS devices;Chang;Proc IEEE,2003

4. Ultrathin-body SOI MOSFET for deep-sub-tenth;Choi;IEEE Electron Device Lett,2000

5. Sugii N, Tsuchiya R, Ishigaki T, Morita Y, Yoshimoto H, Kazuyoshi T, et al. Comprehensive study on Vth variability in silicon on thin BOX (SOTB) CMOS with small random-dopant fluctuation: Finding a way to further reduce variation. In: IEEE Electron Devices Meeting (IEDM), 2008. p. 1-4.

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Systematic characterization for RF small-signal parameter extraction of 28 nm FDSOI MOSFETs up to 110 GHz;Microelectronics Journal;2023-08

2. Enhancement in Capacitance and Transconductance in 90 nm nFETs with HfO₂-ZrO₂ Superlattice Gate Stack for Energy-efficient Cryo-CMOS;2022 International Electron Devices Meeting (IEDM);2022-12-03

3. Novel L‐shaped drain dual‐gate SiGe MOSFET for high‐frequency , low power applications;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2022-06-13

4. TCAD based Modeling of Sub-surface Leakage in Short Channel Bulk MOSFETs;2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS);2021-09-01

5. TCAD-Based Investigation of Statistical Variability Immunity in U-Channel FDSOI n-MOSFET for Sub-7-nm Technology;IEEE Transactions on Electron Devices;2021-06