SOI Technologies from Microelectronics to Microsystems — Meeting the More than Moore Roadmap Requirements

Abstract

This last decade Silicon-on-Insulator (SOI) MOSFET technology has demonstrated its potentialities for high frequency, reaching cut-off frequencies close to 500 GHz for nMOSFETs, and for harsh environments (high temperature, radiation) commercial applications. SOI also presents high resistivity substrate capabilities, leading to substantially reduced substrate losses and non-linearities. More recently, SOI technology has been emerging as a major contender for heterogeneous microsystems applications. In this work, we demonstrate the advantages of SOI technology for Radio Frequency CMOS integration as well as for building thin film sensors on thin dielectric membrane and three-dimensional micro-electro-mechanical (MEMS) sensors and actuators cointegrated with their associated SOI CMOS circuitry.