Compact modeling of triple gate junctionless MOSFETs for accurate circuit design in a wide temperature range-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Compact modeling of triple gate junctionless MOSFETs for accurate circuit design in a wide temperature range

Published:2019-09 Issue: Volume:159 Page:116-122
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Pavanello Marcelo Antonio,Cerdeira Antonio,Doria Rodrigo Trevisoli,Ribeiro Thales Augusto,Ávila-Herrera Fernando,Estrada Magali

Funder

CNPq

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Considerations for ultimate CMOS scaling;Kuhn;IEEE Trans Electron Devices,2012

2. FinFETs and other multi-gate transistors;Colinge,2008

3. Junctionless Nanowire Transistor (JNT): properties and design guidelines;Colinge;Solid State Electron,2011

4. Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode;Soree;J Comput Electron,2008

5. Junctionless multigate field-effect transistor;Lee;Appl Phys Lett,2009

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of 3-nm Cylindrical GAAFETs with Variations in High-k Dielectric Gate-oxide Materials;2022 IEEE Symposium on Industrial Electronics & Applications (ISIEA);2022-07-16

2. A Novel Technique to Investigate the Impact of Temperature and Process Parameters on Electrostatic and Analog/RF Performance of Channel Modulated Junctionless Gate-all-around (CM-JL-GAA) MOSFET;Silicon;2022-03-12

3. Influence of fin width variation on the electrical characteristics of n-type junctionless nanowire transistors at high temperatures;Solid-State Electronics;2021-11

4. Empirical potential profile model for subbands with unusual energy separation in Si(111) p-type inversion layer;Japanese Journal of Applied Physics;2021-05-28

5. Reducing the Drain Leakage Current in a Double-Gate Junctionless MOSFET Using the Electron Screening Effect;Journal of Electronic Materials;2021-03-03

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3