Study of 3-nm Cylindrical GAAFETs with Variations in High-k Dielectric Gate-oxide Materials
Author:
Affiliation:
1. University of Liberal Arts Bangladesh,Department of Electrical and Electronic Engineering,Dhaka,Bangladesh
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9872522/9873648/09873651.pdf?arnumber=9873651
Reference21 articles.
1. Compact modeling of triple gate junctionless MOSFETs for accurate circuit design in a wide temperature range
2. Influence of Gate and Channel Engineering on Multigate Tunnel FETs: A Review
3. Electrical and Thermal Performances of Omega-Shaped-Gate Nanowire Field Effect Transistors for Low Power Operation
4. Modeling the Quantum Gate capacitance of Nano-Sheet Gate-All-Around MOSFET
5. Gate all around FET: An alternative of FinFET for future technology nodes;mohan;Intl J Engg Sci Adv Research,2017
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