Affiliation:
1. Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, Seoul 151-742, Republic of Korea
Abstract
In this paper, we proposed Omega-Shaped-Gate Nanowire Field Effect Transistor (ONWFET) with different gate coverage ratio (GCR). In order to investigate electrical and self-heating characteristics of the proposed devices, on-current, off-current, subthreshold swing (SS), and operating
temperature were examined by using 3D TCAD simulator and compared with nanowire MOSFET (NW-MOSFET). As a result, a possibility of reducing off-current and operating temperature was demonstrated by using the ONWFET with 40% GCR. Therefore, the ONWFET can save power consumption and serve as
low power application such as battery-powered portable electronic devices.
Publisher
American Scientific Publishers
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering
Cited by
15 articles.
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