Junctionless Nanowire Transistor (JNT): Properties and design guidelines-Reference-Cited by-同舟云学术

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Junctionless Nanowire Transistor (JNT): Properties and design guidelines

Published:2011-11 Issue: Volume:65-66 Page:33-37
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Colinge J.P.,Kranti A.,Yan R.,Lee C.W.,Ferain I.,Yu R.,Dehdashti Akhavan N.,Razavi P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. A silicon-on-insulator quantum wire;Colinge;Solid State Electron,1996

2. Device design guidelines for nano-scale MuGFETs;Lee;Solid State Electron,2007

3. Nanowire transistors without junctions;Colinge;Nature Nanotech,2010

4. Junctionless multigate field-effect transistor;Lee;Appl Phys Lett,2009

5. Performance estimation of junctionless multigate transistors;Lee;Solid State Electron,2010

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