Influence of fin width variation on the electrical characteristics of n-type junctionless nanowire transistors at high temperatures-Reference-Cited by-同舟云学术

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Influence of fin width variation on the electrical characteristics of n-type junctionless nanowire transistors at high temperatures

Published:2021-11 Issue: Volume:185 Page:108072
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Ribeiro Thales Augusto,Bergamaschi Flávio Enrico,Barraud Sylvain,Pavanello Marcelo Antonio

Funder

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior

Conselho Nacional de Desenvolvimento Científico e Tecnológico

Fundação de Amparo à Pesquisa do Estado de São Paulo

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Scaling of trigate junctionless nanowire MOSFET with gate length down to 13 nm;Barraud;IEEE Electron Device Lett,2012

2. Investigation of high-performance sub-50 nm junctionless nanowire transistors;Yan;Microelectron Reliab,2011

3. Junctionless nanowire transistor (JNT): properties and design guidelines;Colinge;Solid-State Electron,2011

4. Junctionless multiple-gate transistors for analog applications;Doria;IEEE Trans Electron Device,2011

5. Junctionless nanowire transistor fabricated with high mobility Ge channel;Yu;Phys Status Solidi (Rapid Research Letters),2014

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanowire Transistors: A Next Step for the Low-Power Digital Technology;IETE Journal of Research;2021-09-15

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