Author:
Choi Han-Hyeong,Kim Minsung,Jang Jingon,Lee Keun Hyung,Jho Jae Young,Park Jong Hyuk
Funder
Korea Institute of Science and Technology
Subject
General Materials Science
Reference52 articles.
1. Redox‐based resistive switching memories–nanoionic mechanisms, prospects, and challenges;Waser;Adv. Mater.,2009
2. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures;Lee;Nat. Mater.,2011
3. Highly-ordered 3D vertical resistive switching memory arrays with ultralow power consumption and ultrahigh density;Al-Haddad;ACS Appl. Mater. Interfaces,2016
4. An overview of materials issues in resistive random access memory;Zhu;J. Materiomics,2015
5. Recent progress in resistive random access memories: materials, switching mechanisms, and performance;Pan;Mater. Sci. Eng. R,2014
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献