An overview of materials issues in resistive random access memory-Reference-Cited by-同舟云学术

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An overview of materials issues in resistive random access memory

Published:2015-12 Issue:4 Volume:1 Page:285-295
ISSN:2352-8478
Container-title:Journal of Materiomics
language:en
Short-container-title:Journal of Materiomics

Author:

Zhu Linggang,Zhou Jian,Guo Zhonglu,Sun Zhimei

Funder

National Natural Science Foundation for Distinguished Young Scientists of China

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Metals and Alloys,Surfaces, Coatings and Films,Electronic, Optical and Magnetic Materials

Reference83 articles.

1. Towards the development of flexible non-volatile memories;Han;Adv Mater,2013

2. ReRAM technology; challenges and prospects;Akinaga;IEICE Electron Express,2012

3. A review of three-dimensional resistive switching cross-bar array memories from the integration and materials property points of view;Seok;Adv Funct Mater,2014

4. Resistive random access memory (ReRAM) based on metal oxides;Akinaga;Proc IEEE,2010

5. An overview of the switching parameter variation of RRAM;Zhang;Chin Sci Bull,2014

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