Three-step amorphisation process in ion-implanted GaN at 15 K
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference11 articles.
1. Ion implantation in GaN at liquid-nitrogen temperature: Structural characteristics and amorphization
2. Ion beam and photoluminescence studies of Er and O implanted GaN
3. Damage buildup in GaN under ion bombardment
4. In situion channeling study of gallium disorder and gold profiles in Au-implanted GaN
5. Two-beam irradiation chamber for in situ ion-implantation and RBS at temperatures from 15 K to 300 K
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