Ion beam and photoluminescence studies of Er and O implanted GaN
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference13 articles.
1. Erbium implanted thin film photonic materials
2. Erbium-doped GaAs light-emitting diode at 1.54 μm
3. Room temperature light emitting silicon diodes fabricated by erbium ion implantation
4. Ic Compatible Processing of Si:Er for optoelectronics
5. Lattice Location and Photoluminescence of Er in GaAs and Al0.5Ga0.5As
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3. Strong crystal field splitting and polarization dependence observed in the emission from Eu3+ ions doped into GaN;Light-Emitting Devices, Materials, and Applications XXIV;2020-02-25
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