Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications-Reference-Cited by-同舟云学术

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Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications

Published:2016-01-04 Issue:1 Volume:6 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Mitchell B.,Timmerman D.,Poplawsky J.,Zhu W.,Lee D.,Wakamatsu R.,Takatsu J.,Matsuda M.,Guo W.,Lorenz K.,Alves E.,Koizumi A.,Dierolf V.,Fujiwara Y.

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep18808.pdf

Reference47 articles.

1. Pimputkar, S., Speck, J. S., DenBaars, S. P. & Nakamura, S. Prospects for LED lighting. Nat. Photonics. 3, 180–182 (2009).

2. Kim, S. et al. Fabrication of wide-bandgap transparent electrodes by using conductive filaments: Performance breakthrough in vertical-type GaN LED. Sci. Rep. 4, 5827 (2014).

3. Okamoto, K. et al. Surface-plasmon-enhanced light emitters based on InGaN quantum wells. Nat. Mater. 3, 601–605 (2004).

4. Pearton, S. J. & Ren, F. GaN Electronics. Adv. Mater. 12, 1571–1580 (2000).

5. Kyono, H. et al. Influence of residual oxygen impurity in quaternary InAlGaN multiple-quantum-well active layers on emission efficiency of ultraviolet light-emitting diodes on GaN substrates. J. Appl. Phys. 99, 114509 (2006).

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