Fabrication of wide-bandgap transparent electrodes by using conductive filaments: Performance breakthrough in vertical-type GaN LED
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep05827.pdf
Reference37 articles.
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3. Malyutenko, V. K., Bolgov, S. S. & Tykhonov, A. N. Research on Electrical Efficiency Degradation Influenced by Current Crowding in Vertical Blue InGaN-on-SiC Light-Emitting Diodes. IEEE Photon. Technol. Lett 24, 1124–1126 (2012).
4. Kuang, P. et al. Constant, K. A New Architecture for Transparent Electrodes: Relieving the Trade-Off Between Electrical Conductivity and Optical Transmittance. Adv. Mater. 23, 2469–2473 (2011).
5. O'Dwyer, C. et al. Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices. Nature Nanotechnol. 4, 239–244 (2009).
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