Tuning the valence and concentration of europium and luminescence centers in GaN through co-doping and defect association
Author:
Funder
North Dakota State University
Publisher
American Physical Society (APS)
Subject
Physics and Astronomy (miscellaneous),General Materials Science
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.5.034601/fulltext
Reference67 articles.
1. Present understanding of Eu luminescent centers in Eu-doped GaN grown by organometallic vapor phase epitaxy
2. Perspective: Toward efficient GaN-based red light emitting diodes using europium doping
3. Excitation pathways and efficiency of Eu ions in GaN by site-selective spectroscopy
4. Identification of the prime optical center inGaN:Eu3+
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2. Crystal-field analysis of photoluminescence from orthorhombic Eu centers and energy transfer from host to Eu in GaN co-doped with Mg and Eu;Journal of Luminescence;2024-06
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4. Enhanced luminescence efficiency in Eu-doped GaN superlattice structures revealed by terahertz emission spectroscopy;Communications Materials;2023-11-20
5. Crystal-field analysis and models of Eu-emission centers with C3 symmetry in in situ Eu- and Mg-codoping GaN layers;Journal of Luminescence;2023-10
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