Damage buildup in GaN under ion bombardment
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.62.7510/fulltext
Reference40 articles.
1. GaN: Processing, defects, and devices
2. III–nitrides: Growth, characterization, and properties
3. Damage to epitaxial GaN layers by silicon implantation
4. Ion implantation of epitaxial GaN films: damage, doping and activation
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