Author:
Laird J.S,Bardos R.A,Jagadish C,Jamieson D.N,Legge G.J.F
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
16 articles.
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1. Determination of radiation hardness of silicon diodes;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-06
2. Investigation of electrically-active deep levels in single-crystalline diamond by particle-induced charge transient spectroscopy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-04
3. Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-04
4. Development of diagnostic method for deep levels in semiconductors using charge induced by heavy ion microbeams;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-04
5. Impurity mapping in sulphide minerals using Time-resolved Ion Beam Induced Current imaging;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-06