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Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment

  • Published:2016-04 Issue: Volume:372 Page:128-142
  • ISSN:0168-583X
  • Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Vittone E.ORCID,Pastuovic Z.,Breese M.B.H.,Garcia Lopez J.,Jaksic M.,Raisanen J.,Siegele R.,Simon A.,Vizkelethy G.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference55 articles.

1. IAEA CRP n. F11016, .

2. Particle interaction and displacement damage in silicon devices operated in radiation environments;Leroy;Rep. Prog. Phys,2007

3. Deep doping profiles in silicon created by MeV hydrogen implantation: influence of implantation;Laven;Parameters,2011

4. Probability of divacancy trap production in silicon diodes exposed to focused ion beam irradiation;Pastuović;Appl. Phys. Lett.,2011

5. A review of ion beam induced charge microscopy;Breese;Nucl. Instr. Meth. Phys. Res. Sect. B,2007

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