Development of diagnostic method for deep levels in semiconductors using charge induced by heavy ion microbeams-Reference-Cited by-同舟云学术

Development of diagnostic method for deep levels in semiconductors using charge induced by heavy ion microbeams

Published:2015-04 Issue: Volume:348 Page:240-245
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Kada Wataru,Kambayashi Yuya,Iwamoto Naoya,Onoda Shinobu,Makino Takahiro,Koka Masashi,Kamiya Tomihiro,Hoshino Norihiro,Tsuchida Hidekazu,Kojima Kazutoshi,Hanaizumi Osamu,Ohshima Takeshi^ORCID

Funder

JSPS Grant-in-Aid for Scientific Research

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

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