Change in the electrical performance of GaAs solar cells with InGaAs quantum dot layers by electron irradiation-Reference-Cited by-同舟云学术

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Change in the electrical performance of GaAs solar cells with InGaAs quantum dot layers by electron irradiation

Published:2013-01 Issue: Volume:108 Page:263-268
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Ohshima T.,Sato S.,Imaizumi M.,Nakamura T.,Sugaya T.,Matsubara K.,Niki S.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels;Luque;Physical Review Letters,1997

2. Limiting efficiency of an intermediate band solar cell under a terrestrial spectrum;Bremner;Applied Physics Letters,2008

3. Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells;Oshima;Applied Physics Letters,2008

4. Characteristics of InAs/GaNAs strain-compensated quantum dot solar cell;Okada;Journal of Applied Physics,2009

5. Highly stacked and well-aligned In0.4Ga0.6As quantum dot solar cells with In0.2Ga0.8As cap layer;Sugaya;Applied Physics Letters,2010

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A simulation study of irradiation effect on InAs/GaAsSb type II quantum dot structures;Heliyon;2024-07

2. Proton irradiation induced damage effects in CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub>-based perovskite solar cells;Acta Physica Sinica;2023

3. Degradation Study of InGaAsN p-i-n Solar Cell Under 1-MeV Electron Irradiation;IEEE Transactions on Nuclear Science;2021-08

4. Characterization of nonradiative recombination centers in proton-irradiated InAs/GaAs quantum dots by two-wavelength-excited photoluminescence;Japanese Journal of Applied Physics;2018-08-01

5. Defect characterization of proton irradiated GaAs pn-junction diodes with layers of InAs quantum dots;Journal of Applied Physics;2016-05-14

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