Defect characterization of proton irradiated GaAs pn-junction diodes with layers of InAs quantum dots
Author:
Affiliation:
1. Optoelectronics and Radiation Effects Branch, U.S. Naval Research Laboratory, Washington, DC 20375, USA
2. NanoPower Research Labs, Rochester Institute of Technology, Rochester, New York 14623, USA
Funder
Small Business Innovation Research (SBIR)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4949476
Reference40 articles.
1. Study on carrier trapping and emission processes in InAs/GaAs self-assembled quantum dots by varying filling pulse width during DLTS measurements
2. Radiation hardness of InGaAs/GaAs quantum dots
3. 230 s room-temperature storage time and 1.14 eV hole localization energy in In0.5Ga0.5As quantum dots on a GaAs interlayer in GaP with an AlP barrier
4. Hole and electron traps in the InGaAs/GaAs heterostructures with quantum dots
5. Deep level transient spectroscopy characterization of InAs self-assembled quantum dots
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