Study on carrier trapping and emission processes in InAs/GaAs self-assembled quantum dots by varying filling pulse width during DLTS measurements
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference10 articles.
1. Excitability in a Quantum Dot Semiconductor Laser with Optical Injection
2. Controlling Artificial Atoms
3. Improvement of the uniformity of self-assembled InAs quantum dots grown on InGaAs∕GaAs by low-pressure metalorganic chemical vapor deposition
4. Self-assembling quantum dots for optoelectronic devices on Si and GaAs
5. Correlation of In–Ga intermixing with band-tail states in InAs∕GaAs quantum dots
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1. Electron levels of defects in In(Ga)As/(In)GaAs nanostructures: A review;Semiconductor Physics, Quantum Electronics and Optoelectronics;2024-06-21
2. Effects of substrate material on the electrical properties of self-assembled InAs quantum dots-based laser structures;Applied Physics A;2023-05-10
3. Interface traps contribution on transport mechanisms under illumination in metal–oxide–semiconductor structures based on silicon nanocrystals;Applied Physics A;2018-01-10
4. Deep Level Assessment of n-Type Si/SiO2Metal-Oxide-Semiconductor Capacitors with Embedded Ge Quantum Dots;ECS Journal of Solid State Science and Technology;2018
5. Deep Level Assessment of n-Type Si/SiO2Metal-Oxide-Semiconductor Capacitors with Embedded Ge Quantum Dots;ECS Transactions;2017-08-01
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