Improvement of the uniformity of self-assembled InAs quantum dots grown on InGaAs∕GaAs by low-pressure metalorganic chemical vapor deposition

Author:

Yang Tao,Tsukamoto Shiro,Tatebayashi Jun,Nishioka Masao,Arakawa Yasuhiko

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Image histogram decomposition method for particle sizing – A numerical simulation study;Micron;2022-11

2. Optical and structural investigation of ex-situ passivated strain coupled InAs surface quantum dots;Low-Dimensional Materials and Devices 2019;2019-09-09

3. Strain Balancing of Metal-Organic Vapour Phase Epitaxy InAs/GaAs Quantum Dot Lasers;IEEE Journal of Selected Topics in Quantum Electronics;2017-11

4. Planar nanowires fabricated by thermal gratings on the GaAs(001) surface;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-05

5. Influence of Sb/N contents during the capping process on the morphology of InAs/GaAs quantum dots;Solar Energy Materials and Solar Cells;2016-02

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