230 s room-temperature storage time and 1.14 eV hole localization energy in In0.5Ga0.5As quantum dots on a GaAs interlayer in GaP with an AlP barrier-Reference-Cited by-同舟云学术

230 s room-temperature storage time and 1.14 eV hole localization energy in In0.5Ga0.5As quantum dots on a GaAs interlayer in GaP with an AlP barrier

Published:2015-01-26 Issue:4 Volume:106 Page:042102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bonato Leo¹^ORCID,Sala Elisa M.¹,Stracke Gernot¹,Nowozin Tobias¹,Strittmatter André¹,Ajour Mohammed Nasser²,Daqrouq Khaled²,Bimberg Dieter¹²

Affiliation:

1. Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany

2. King Abdulaziz University, Jeddah, Saudi Arabia

Funder

Deutsche Forschungsgemeinschaft (DFG)

Bundesministerium für Bildung und Forschung (Federal Ministry of Education and Research)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4906994

Reference22 articles.

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2. The QD-Flash: a quantum dot-based memory device

3. A write time of 6ns for quantum dot–based memory structures

4. Hole-based memory operation in an InAs/GaAs quantum dot heterostructure

5. 800 meV localization energy in GaSb/GaAs/Al0.3Ga0.7As quantum dots

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