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Determination of radiation hardness of silicon diodes

  • Published:2019-06 Issue: Volume:449 Page:6-10
  • ISSN:0168-583X
  • Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Vittone E.,Garcia Lopez J.,Jaksic M.,Jimenez Ramos M.C.,Lohstroh A.,Pastuovic Z.,Rath S.,Siegele R.,Skukan N.,Vizkelethy G.,Simon A.

Funder

Croatian Science Foundation

Italian Ministry of Education

Italian Institute for Nuclear Physics

NCRIS

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference23 articles.

1. Silicon space solar cells: progression and radiation-resistance analysis;Rehman;J. Korean Phys. Soc.,2016

2. RD50 COLLABORATION, Radiation hard semiconductor devices for very high luminosity colliders (2018), https://rd50.web.cern.ch/rd50/.

3. Empirical approach to the description of spectral performance degradation of silicon photodiodes used as particle detectors;Kalinka;Nucl. Instrum. Methods Phys. Res., Sect. B,2009

4. Criteria for identifying radiation resistant semiconductor materials;Messenger;IEEE Trans. Nucl. Sci.,2005

5. Papers arising from IAEA Coordinated Research Project “Utilization of ion accelerators for studying and modelling of radiation induced defects in semiconductors and insulators” (F11016);Vittone;Nucl. Instrum. Methods Phys. Res. B,2016

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