AlGaInN metal-organic-chemical-vapor-deposition gas-phase chemistry in hydrogen and nitrogen diluents: First-principles calculations
Author:
Publisher
Elsevier BV
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Reference21 articles.
1. Reversible Adduct Formation of Trimethylgallium and Trimethylindium with Ammonia
2. Does the Ring Compound [(CH3)2GaNH2]3 Form during MOVPE of Gallium Nitride? Investigations via Density Functional and Reaction Rate Theories
3. A study of parasitic reactions between NH3 and TMGa or TMAI
4. Nature of the parasitic chemistry during AlGaInN OMVPE
5. Growth mechanism of atmospheric pressure MOVPE of GaN and its alloys: gas phase chemistry and its impact on reactor design
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