A CFD study of the gas reaction path in growth of InN films in metal–organic chemical vapor deposition

Author:

Su Peng,Zheng Guangyu,Zhang Hong,Sun Yukang,Zuo Ran,Liu LijunORCID

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference47 articles.

1. Materials chemistry of group 13 nitrides;Devi;Top. Organomet. Chem.,2005

2. Progress in modeling of III-nitride MOCVD;Dauelsberg;J. Prog. Cryst. Growth Charact. Mater.,2020

3. GaN, AlN, and InN: a review;Strite;J. Vacuum Sci. Technol. B: Microelectron. Nanometer Struct. Process. Measur. Phenomena,1998

4. Computational chemistry predictionsof reaction processesin organometallic vapor phase epitaxy;Simka;Prog. Cryst. Growth Charact. Mater.,1997

5. ¨ et al., AlGaInN metal-organicchemical-vapor-deposition gas-phase chemistry in hydrogen and nitrogen diluents: first-principles calculations;Georgieva;Chem. Phys. Lett.,2006

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