Does the Ring Compound [(CH3)2GaNH2]3 Form during MOVPE of Gallium Nitride? Investigations via Density Functional and Reaction Rate Theories
Author:
Affiliation:
1. CFD Research Corporation, 215 Wynn Drive, Suite 501, Huntsville, Alabama 35805
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/jp021721i
Reference34 articles.
1. High temperature adduct formation of trimethylgallium and ammonia
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