Role of different kinds of superlattices on the strain engineering of GaN films grown on Si (111)-Reference-Cited by-同舟云学术

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Role of different kinds of superlattices on the strain engineering of GaN films grown on Si (111)

Published:2017-09 Issue: Volume:109 Page:249-253
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Yang Qiankun,Li Zhonghui,Pan Lei,Luo Weike,Dong Xun

Funder

National Natural Science Foundation of China

National High Technology Research and Development Program of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference27 articles.

1. GaN: Processing, defects, and devices

2. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

3. Role of an ultra-thin AlN/GaN superlattice interlayer on the strain engineering of GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy

4. Growth stresses and cracking in GaN films on (111) Si grown by metal-organic chemical-vapor deposition. I. AlN buffer layers

5. Reduction of dislocations in GaN epilayers grown on Si(111) substrate using SixNy inserting layer

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of substrate nitridation conditions and buffer layer structures on the crack-free GaN layers on silicon substrate grown by ammonia-assisted molecular beam epitaxy;Thin Solid Films;2024-02

2. Effects of the pretreatment of Si substrate before the pre-deposition of Al on GaN-on-Si;Superlattices and Microstructures;2021-11

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