Role of an ultra-thin AlN/GaN superlattice interlayer on the strain engineering of GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

Role of an ultra-thin AlN/GaN superlattice interlayer on the strain engineering of GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy

Published:2013-12-02 Issue:23 Volume:103 Page:231908
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Shen X. Q.,Takahashi T.,Rong X.,Chen G.,Wang X. Q.,Shen B.,Matsuhata H.,Ide T.,Shimizu M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4841655

Reference29 articles.

1. GaN, AlN, and InN: A review

2. Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices

3. GaN on Si Substrate with AlGaN/AlN Intermediate Layer

4. Growth stresses and cracking in GaN films on (111) Si grown by metal-organic chemical-vapor deposition. I. AlN buffer layers

5. Growth of crack-free GaN on Si(111) with graded AlGaN buffer layers

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