Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1416169
Reference10 articles.
1. Strain relief and its effect on the properties of GaN using isoelectronic In doping grown by metalorganic vapor phase epitaxy
2. Control of strain in GaN using an In doping-induced hardening effect
3. Control of strain in GaN by a combination of H2 and N2 carrier gases
4. Spontaneous polarization and piezoelectric constants of III-V nitrides
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