Preparation of freestanding GaN wafer by hydride vapor phase epitaxy on porous silicon-Reference-Cited by-同舟云学术

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Preparation of freestanding GaN wafer by hydride vapor phase epitaxy on porous silicon

Published:2018-05 Issue: Volume:117 Page:293-297
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Wu Xian,Li Peng,Liang Renrong,Xiao Lei,Xu Jun,Wang Jing

Funder

national key reseach and development program of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. Preparation and properties of free-standing HVPE grown GaN substrates

2. Optical and Structural Characteristics of Virtually Unstrained Bulk-Like GaN

3. GaN growth on porous silicon by MOVPE

4. Growth of high quality GaN layers with AlN buffer on Si(111) substrates

5. Growth of crack-free GaN on Si(111) with graded AlGaN buffer layers

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preparation of controllable double-selective etched porous substrate for HVPE growth of GaN crystals with excellent optical properties;CrystEngComm;2023

2. Influence of Polarities of GaN Substrates on Surface Morphologies and Physical Properties of Epitaxial Mg‐Doped GaN Films Grown by MOCVD;physica status solidi (a);2022-04-15

3. Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates;CrystEngComm;2022

4. Electrochemical liftoff of freestanding GaN by a thick highly conductive sacrificial layer grown by HVPE*;Chinese Physics B;2021-06-01

5. Fabrication of a 2 inch free standing porous GaN crystal film and application in the growth of relaxed crack-free thick GaN;CrystEngComm;2021

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