Preparation of controllable double-selective etched porous substrate for HVPE growth of GaN crystals with excellent optical properties

Author:

Zhang Baoguo1ORCID,Hu Haixiao1,Yao Xiaogang2,Wu Yongzhong1ORCID,Shao Yongliang1ORCID,Hao Xiaopeng1ORCID

Affiliation:

1. School of Materials Science and Engineering, Qilu University of Technology (Shandong Academy of Science), Jinan, 250353, P. R. China

2. State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China

Abstract

Heteroepitaxial growth of GaN will inevitably generate defects; serious residual stress will be caused by the mismatch of the lattice and thermal expansion coefficient between the substrate and the GaN, and eventually the crystal may be broken.

Funder

Natural Science Foundation of Shandong Province

National Natural Science Foundation of China

Shandong Academy of Sciences

Qilu University of Technology

Taishan Scholar Project of Shandong Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

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