Preparation of controllable double-selective etched porous substrate for HVPE growth of GaN crystals with excellent optical properties-Reference-Cited by-同舟云学术

Preparation of controllable double-selective etched porous substrate for HVPE growth of GaN crystals with excellent optical properties

Published:2023 Issue:47 Volume:25 Page:6602-6610
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Zhang Baoguo¹^ORCID,Hu Haixiao¹,Yao Xiaogang²,Wu Yongzhong¹^ORCID,Shao Yongliang¹^ORCID,Hao Xiaopeng¹^ORCID

Affiliation:

1. School of Materials Science and Engineering, Qilu University of Technology (Shandong Academy of Science), Jinan, 250353, P. R. China

2. State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China

Abstract

Heteroepitaxial growth of GaN will inevitably generate defects; serious residual stress will be caused by the mismatch of the lattice and thermal expansion coefficient between the substrate and the GaN, and eventually the crystal may be broken.

Funder

Natural Science Foundation of Shandong Province

National Natural Science Foundation of China

Shandong Academy of Sciences

Qilu University of Technology

Taishan Scholar Project of Shandong Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CE/D3CE00989K

Reference36 articles.

1. Advances in Bulk Crystal Growth of AlN and GaN

2. Recent Progress in GaN-Based Light-Emitting Diodes

3. Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactor

4. A subfemtotesla multichannel atomic magnetometer

5. Metal–organic–vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes