Growth of high quality GaN layers with AlN buffer on Si(111) substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Ultraviolet and violet GaN light emitting diodes on silicon
2. Visible-blind GaN Schottky barrier detectors grown on Si(111)
3. Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer
4. The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer
5. High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates
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1. Crack-free > 1-μm AlN layer on Si substrate using ductile interlayer for strain modification in epitaxial film;Applied Physics Letters;2024-09-09
2. Exploring Inorganic Flexible Electronics: III‐Nitride Light‐Emitting Diode Epilayers on Wafer‐Scale Exfoliable Mica Substrate;Advanced Electronic Materials;2024-08-12
3. Tackling residual tensile stress in AlN-on-Si nucleation layers via the controlled Si(111) surface nitridation;Surfaces and Interfaces;2024-08
4. The Effect of the Barrier Layer on the Uniformity of the Transport Characteristics of AlGaN/GaN Heterostructures on HR-Si(111);Micromachines;2024-04-16
5. Ultrathin GaN Crystal Realized Through Nitrogen Substitution of Layered GaS;Journal of Electronic Materials;2023-09-02
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