Growth of high quality GaN layers with AlN buffer on Si(111) substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Ultraviolet and violet GaN light emitting diodes on silicon
2. Visible-blind GaN Schottky barrier detectors grown on Si(111)
3. Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer
4. The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer
5. High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates
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