Visible-blind GaN Schottky barrier detectors grown on Si(111)-Reference-Cited by-同舟云学术

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Visible-blind GaN Schottky barrier detectors grown on Si(111)

Published:1998-02-02 Issue:5 Volume:72 Page:551-553
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Osinsky A.,Gangopadhyay S.,Yang J. W.,Gaska R.,Kuksenkov D.,Temkin H.,Shmagin I. K.,Chang Y. C.,Muth J. F.,Kolbas R. M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.120755

Reference7 articles.

1. Schottky barrier detectors on GaN for visible–blind ultraviolet detection

2. Low noisep-π-nGaN ultraviolet photodetectors

3. Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy

4. AlGaN ultraviolet photoconductors grown on sapphire

5. High quality GaN–InGaN heterostructures grown on (111) silicon substrates

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