Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates

Author:

Liu Lei1,Zhang Xu2,Wang Shouzhi1,Wang Guodong1,Yu Jiaoxian3,Hu Xiaobo1,Xu Qingjun1,Xu Xiangang1,Zhang Lei1ORCID

Affiliation:

1. Institute of Novel Semiconductors, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P.R. China

2. National Center for International Joint Research of Electronic Materials and Systems, School of Information Engineering, Zhengzhou University, Zhengzhou, Henan 450052, P. R. China

3. Key Laboratory of Processing and Testing Technology of Glass, & Functional Ceramics of Shandong Province, School of Materials Science and Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, P. R. China

Abstract

This paper describes the nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates. The growth behavior of epitaxially grown GaN on porous substrates is studied in detail for the first time at the nucleation stage.

Funder

Natural Science Foundation of Shandong Province

National Natural Science Foundation of China

Shenzhen Science and Technology Innovation Program

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

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