Influence of Polarities of GaN Substrates on Surface Morphologies and Physical Properties of Epitaxial Mg‐Doped GaN Films Grown by MOCVD-Reference-Cited by-同舟云学术

Influence of Polarities of GaN Substrates on Surface Morphologies and Physical Properties of Epitaxial Mg‐Doped GaN Films Grown by MOCVD

Published:2022-04-15 Issue:12 Volume:219 Page:2200033
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Wei Sida¹²,Wang Jing¹²,Wang Xiaodan³,Gao Xiaodong²,Chen Jiafan²,Mao Hongmin³,Zeng Xionghui¹²^ORCID,Xu Ke¹²

Affiliation:

1. School of Nano-Tech and Nano-Bionics University of Science and Technology of China Hefei 230026 China

2. Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Suzhou 215123 China

3. Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application School of Physical Science and Technology Suzhou University of Science and Technology Suzhou 215009 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202200033

Reference19 articles.

1. GaN: Processing, defects, and devices

2. A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

3. Growth and doping of bulk GaN by hydride vapor phase epitaxy*

4. Preparation of freestanding GaN wafer by hydride vapor phase epitaxy on porous silicon

5. High free carrier concentration in p-GaN grown on AlN substrates

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