Characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with sulfur treatments
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference10 articles.
1. High-gain, low offset voltage, and zero potential spike by InGaP/GaAs δ-doped single heterojunction bipolar transistor (δ-SHBT)
2. Investigation of an InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with reduced potential spike
3. DC characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT)
4. Comparative study on dc characteristics of In0.49Ga0.51P-channel heterostructure field-effect transistors with different gate metals
5. An ImprovedIn0.5Ga0.5P/GaAsDouble Heterostructure-Emitter Bipolar Transistor Using Emitter Edge-Thinning Technique
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comparative study of InGaP/GaAs heterojunction bipolar transistors (HBTs) with different base surface treatments;Superlattices and Microstructures;2009-10
2. Optimization of surface passivation for InGaAs/InP pin photodetectors using ammonium sulfide;Semiconductor Science and Technology;2008-02-07
3. Characteristics of an InGaP/Al[sub X]Ga[sub 1−X]As/GaAs composite-emitter heterojunction bipolar transistor (CEHBT);Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008
4. Surface treatment effect on temperature-dependent properties of InGaP∕GaAs heterobipolar transistors;Journal of Applied Physics;2007-02
5. Two-dimensional analysis for emitter ledge thickness of InGaP∕GaAs heterojunction bipolar transistors;Applied Physics Letters;2007-01-22
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