Investigation of an InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with reduced potential spike
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference10 articles.
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4. Surface recombination current in InGaP/GaAs heterostructure-emitter bipolar transistor;Yang;IEEE Trans. Electron Devices,1994
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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The Effect of Sulfur Treatment on the Temperature-Dependent Performance of InGaP/GaAs HBTs;IEEE Transactions on Device and Materials Reliability;2006-12
2. Characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with sulfur treatments;Superlattices and Microstructures;2006-05
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