Comparative study of InGaP/GaAs heterojunction bipolar transistors (HBTs) with different base surface treatments-Reference-Cited by-同舟云学术

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Comparative study of InGaP/GaAs heterojunction bipolar transistors (HBTs) with different base surface treatments

Published:2009-10 Issue:4 Volume:46 Page:715-722
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Chen Tzu-Pin,Lee Chi-Jhung,Chen Li-Yang,Tsai Tsung-Han,Liu Yi-Jhung,Huang Chien-Chang,Chen Tai-You,Cheng Shiou-Ying,Liu Wen-Chau

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference25 articles.

1. A novel InGaP/Al/sub x/Ga/sub 1-x/As/GaAs CEHBT

2. A New InP/InGaAs Double Heterojunction Bipolar Transistor With a Step-Graded InAlGaAs Collector Structure

3. Novel Delta-Doped InAlGaP/GaAs Heterojunction Bipolar Transistor

4. Comprehensive studies of InGaP/GaAs heterojunction bipolar transistors with different thickness of setback layers

5. Improved dc and microwave performance of heterojunction bipolar transistors by full sulfur passivation

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The impact of interface charges at the heterojunction on the carriers transport in abrupt InP/InGaAs heterojunction bipolar transistor;Acta Physica Sinica;2013

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