Two-dimensional analysis for emitter ledge thickness of InGaP∕GaAs heterojunction bipolar transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2432224
Reference11 articles.
1. An ImprovedIn0.5Ga0.5P/GaAsDouble Heterostructure-Emitter Bipolar Transistor Using Emitter Edge-Thinning Technique
2. Effects of passivation-layer thickness and current gain enhancement of InGaP/GaAs -doped single heterojunction bipolar transistors using an InGaP passivation layer
3. Improved dc and microwave performance of heterojunction bipolar transistors by full sulfur passivation
4. Characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with sulfur treatments
5. Analysis of the operation of GaAlAs/GaAs HBTs
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1. High-speed InP-based heterojunction bipolar transistors;Reference Module in Materials Science and Materials Engineering;2023
2. Comprehensive study of InGaP/InGaAs/GaAs dual channel pseudomorphic high electron mobility transistors;Solid-State Electronics;2012-06
3. Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple delta-doped sheets;Semiconductors;2012-02
4. Effect of graded triple delta-doped sheets on the performance of GaAs based dual channel pseudomorphic high electron mobility transistors;Superlattices and Microstructures;2011-10
5. On an InGaP/InGaAs Double Channel Pseudomorphic High Electron Mobility Transistor With Graded Triple $\delta$-Doped Sheets;IEEE Transactions on Electron Devices;2008-11
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