Effects of passivation-layer thickness and current gain enhancement of InGaP/GaAs -doped single heterojunction bipolar transistors using an InGaP passivation layer
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
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4. A new emitter design of InGaP/GaAs HBTs for high-frequency applications
5. Plasma and wet chemical etching of In0.5Ga0.5P
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1. Surface potential in n- and p-GaInP2(100): temperature effect;Journal of Physics D: Applied Physics;2021-02-18
2. Comparative study of InGaP/GaAs heterojunction bipolar transistors (HBTs) with different base surface treatments;Superlattices and Microstructures;2009-10
3. Influence of emitter-ledge thickness on the surface- recombination mechanism of InGaP/GaAs heterojunction bipolar transistor;Superlattices and Microstructures;2008-04
4. Surface treatment effect on temperature-dependent properties of InGaP∕GaAs heterobipolar transistors;Journal of Applied Physics;2007-02
5. Two-dimensional analysis for emitter ledge thickness of InGaP∕GaAs heterojunction bipolar transistors;Applied Physics Letters;2007-01-22
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