Surface treatment effect on temperature-dependent properties of InGaP∕GaAs heterobipolar transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2432310
Reference14 articles.
1. High-current-gain small-offset-voltage In/sub 0.49/Ga/sub 0.51/P/GaAs tunneling emitter bipolar transistors grown by gas source molecular beam epitaxy
2. High-gain, low offset voltage, and zero potential spike by InGaP/GaAs δ-doped single heterojunction bipolar transistor (δ-SHBT)
3. Comprehensive study of an InGaP/AlGaAs/GaAs heterojunction bipolar transistor with a continuous conduction-band structure
4. Temperature Dependence of the Electron Impact Ionization in InGaP–GaAs–InGaP DHBTs
5. An ImprovedIn0.5Ga0.5P/GaAsDouble Heterostructure-Emitter Bipolar Transistor Using Emitter Edge-Thinning Technique
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