Comprehensive study of an InGaP/AlGaAs/GaAs heterojunction bipolar transistor with a continuous conduction-band structure
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. GaAlAs/GaAs heterojunction bipolar transistors: issues and prospects for application
2. Dependence of Offset Error on Overlay Mark Structures in Overlay Measurement
3. Band lineup for a GaInP/GaAs heterojunction measured by a high‐gainNpnheterojunction bipolar transistor grown by metalorganic chemical vapor deposition
4. Influence of the -doping sheet and setback layer on the performance of an InGaP/GaAs heterojunction bipolar transistor
5. Comparison of In/sub 0.5/Ga/sub 0.5/P/GaAs single- and double-heterojunction bipolar transistors with a carbon-doped base
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