Influence of emitter-ledge thickness on the surface- recombination mechanism of InGaP/GaAs heterojunction bipolar transistor-Reference-Cited by-同舟云学术

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Influence of emitter-ledge thickness on the surface- recombination mechanism of InGaP/GaAs heterojunction bipolar transistor

Published:2008-04 Issue:4 Volume:43 Page:368-374
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Chu Kuei-Yi,Cheng Shiou-Ying,Chen Tzu-Pin,Hung Ching-Wen,Chen Li-Yang,Tsai Tsung-Han,Liu Wen-Chau,Chen Lu-An

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference13 articles.

1. High-gain, low offset voltage, and zero potential spike by InGaP/GaAs δ-doped single heterojunction bipolar transistor (δ-SHBT)

2. Characteristics of a triple-well heterostructure-emitter bipolar transistor (TWHEBT)

3. A New InP–InGaAs HBT With a Superlattice-Collector Structure

4. Comprehensive study of InGaP/AlxGa1 xAs/GaAs heterojunction bipolar transistors with different doping concentrations of AlxGa1 xAs graded layers

5. Emitter size effect on current gain in fully self-aligned AlGaAs/GaAs HBT's with AlGaAs surface passivation layer

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