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Comprehensive study of InGaP/AlxGa1 xAs/GaAs heterojunction bipolar transistors with different doping concentrations of AlxGa1 xAs graded layers

  • Published:2003-12-22 Issue:3 Volume:19 Page:351-358
  • ISSN:0268-1242
  • Container-title:Semiconductor Science and Technology
  • language:
  • Short-container-title:Semicond. Sci. Technol.

Author:

Cheng Shiou-Ying,Chen Jing-Yuh,Chen Chun-Yuan,Chuang Hung-Ming,Yen Chih-Hung,Lee Kuan-Ming,Liu Wen-Chau

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantitative analysis of dc characteristics of Ga0.5In0.5P/GaAs heterojunction bipolar devices;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-11

2. Temperature Dependence of Current Gain, Ideality Factor, and Offset Voltage of AlGaAs/GaAs and InGaP/GaAs HBTs;IEEE Transactions on Electron Devices;2009-12

3. Stability study and effect of passivation on InP/InGaAs double heterojunction bipolar transistors;Applied Physics Letters;2009-02-09

4. Influence of emitter-ledge thickness on the surface- recombination mechanism of InGaP/GaAs heterojunction bipolar transistor;Superlattices and Microstructures;2008-04

5. Characteristics of an InGaP/Al[sub X]Ga[sub 1−X]As/GaAs composite-emitter heterojunction bipolar transistor (CEHBT);Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008
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