Temperature-dependent investigation of a high-breakdown voltage and low-leakage current Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As pseudomorphic HEMT-Reference-Cited by-同舟云学术

Temperature-dependent investigation of a high-breakdown voltage and low-leakage current Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As pseudomorphic HEMT

Published:1999-06 Issue:6 Volume:20 Page:274-276
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wen-Chau Liu ,Wen-Lung Chang ,Wen-Shiung Lour ,Shiou-Ying Cheng ,Yung-Hsin Shie ,Jing-Yuh Chen ,Wei-Chou Wang ,Hsi-Jen Pan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/16625/00767096.pdf?arnumber=767096

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