Comprehensive study of InGaP/InGaAs/GaAs dual channel pseudomorphic high electron mobility transistors-Reference-Cited by-同舟云学术

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Comprehensive study of InGaP/InGaAs/GaAs dual channel pseudomorphic high electron mobility transistors

Published:2012-06 Issue: Volume:72 Page:22-28
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Chu Kuei-Yi,Cheng Shiou-Ying,Chiang Meng-Hsueh,Liu Yi-Jung,Huang Chien-Chang,Chen Tai-You,Hsu Chi-Shiang,Liu Wen-Chau,Cheng Wen-Yu,Lin Bin-Cian

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Modeling for electron transport in AlGaAs/GaAs/AlGaAs double-heterojunction structures;Tomizawa;IEEE Trans Electron Dev,1989

2. High performance symmetric double δ-doped GaAs/InGaAs/GaAs pseudomorphic HFETs grown by MOCVD;Hsu;IEEE Trans Electron Dev,1994

3. Temperature-dependence investigation of a high-performance inverted δ-doped V-shaped GaInP/InxGa1−xAs/GaAs pseudomorphic high electron mobility transistor;Liu;IEEE Trans Electron Dev,2001

4. Dual-gate InGaP/InGaAs pseudomorphic high electron mobility transistors with high linearity and variable gate-voltage swing;Lour;Semicond Sci Technol,2001

5. Performance of surface and gate engineered AlGaAs/InGaAs pseudomorphic high-electron mobility transistors;Lin;J Electrochem Soc,2009

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Asymmetric Doping‐Dependent Electron Transport Mobility in In_xGa_1–xAs/GaAs Quantum Well Field‐Effect Transistor Structure;physica status solidi (b);2024-07-28

2. Structural Asymmetry related Nonlinear Mobility of Electron in In_xGa_1-xAs/GaAs Quantum well FET;2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON);2022-11-26

3. Study of nonmonotonic electron mobility due to influence of asymmetric structure parameters in pseudomorphic heterojunction field effect transistors;Physica Scripta;2022-10-18

4. Numerical Study of Two HEMTs, AlGaN and InGaN, by Sharing the Drain Area for Power Application;IETE Journal of Research;2021-04-07

5. Temperature-dependent charge-carrier transport between Si-δ-doped layers and AlGaAs/InGaAs/AlGaAs quantum well with various space layer thicknesses measured by Hall-effect analysis;Scientific Reports;2020-07-27

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