Effect of graded triple delta-doped sheets on the performance of GaAs based dual channel pseudomorphic high electron mobility transistors-Reference-Cited by-同舟云学术

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Effect of graded triple delta-doped sheets on the performance of GaAs based dual channel pseudomorphic high electron mobility transistors

Published:2011-10 Issue:4 Volume:50 Page:289-295
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Chu Kuei-Yi,Cheng Shiou-Ying,Chiang Meng-Hsueh,Liu Yi-Jung,Huang Chien-Chang,Chen Tai-You,Hsu Chi-Shiang,Liu Wen-Chau,Cheng Wen-Yu,Lin Bin-Cian

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference11 articles.

1. Modeling for electron transport in AlGaAs/GaAs/AlGaAs double-heterojunction structures

2. Dual-gate In0.5Ga0.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors with high linearity and variable gate-voltage swing

3. A $\delta$-Doped InGaP/InGaAs pHEMT With Different Doping Profiles for Device-Linearity Improvement

4. Performance of Surface and Gate-Engineered AlGaAs∕InGaAs Pseudomorphic High-Electron Mobility Transistors

5. Comparative Studies on Double δ-Doped Al[sub 0.3]Ga[sub 0.7]As∕In[sub x]Ga[sub 1−x]As∕GaAs Symmetrically Graded Doped-Channel Field-Effect Transistors

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