A $\delta$-Doped InGaP/InGaAs pHEMT With Different Doping Profiles for Device-Linearity Improvement-Reference-Cited by-同舟云学术

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A $\delta$-Doped InGaP/InGaAs pHEMT With Different Doping Profiles for Device-Linearity Improvement

Published:2007-07 Issue:7 Volume:54 Page:1617-1625
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lin Yueh-Chin,Chang Edward Yi,Yamaguchi Hiroshi,Wu Wei-Cheng,Chang Chun-Yen

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4252351/04252369.pdf?arnumber=4252369

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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