Optimization of surface passivation for InGaAs/InP pin photodetectors using ammonium sulfide
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. Ga<inf>0.47</inf>In<inf>0.53</inf>As: A ternary semiconductor for photodetector applications
2. Perimeter and bulk recombination currents in GaAs homojunction diodes and heterojunction bipolar transistors after surface processing
3. Effect of surface treatment on surface recombination velocity and diode leakage current in GaP
4. Effects of Na2S and (NH4)2S edge passivation treatments on the dark current‐voltage characteristics of GaAspndiodes
5. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
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3. Effect of sulfide-polyamide passivation on dark currents of the InAlAs/InGaAs/InP avalanche photodiodes;ST PETER POLY U J-PH;2023
4. Avalanche photodiodes based on InAlAs/InGaAs heterostructures with sulfide–polyamide passivation of mesa structures;Journal of Optical Technology;2022-11-01
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